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| savantic semiconductor product specification silicon npn power transistors 2SC3058 d escription with to-3 package high voltage ,high speed applications for switching regulator and dc/dc converter applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 30 a p t total power dissipation t c =25 200 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-mb thermal resistance from junction to mounting base 1.0 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3058 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 600 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 7 v v cesat collector-emitter saturation voltage i c =20a; i b =4a 1.0 v v besat base-emitter saturation voltage i c =20a; i b =4a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =1a ; v ce =5v 15 50 h fe-2 dc current gain i c =20a ; v ce =5v 10 40 f t transition frequency i c =4a ; v ce =10v 30 mhz c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 420 pf savantic semiconductor product specification 3 silicon npn power transistors 2SC3058 package outline fig.2 outline dimensions |
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